Growth and Characterization of InAs Quantum Dots
The transition to low dimensional structures allows to
exploit new unconventional materials properties. Quantum dots
have electronic confinement in 3 dimensions and therefore can
be considered as 0 dimensional objects.
We investigate the growth of InAs quantum dots on GaAs and AlGaAs surfaces. To enable the integration of quantum dots into optoelectronic devices, high densities and sharp size distributions must be achieved. In order to find the right growth parameters, we rely on feedback from atomic force microscopy and photolominescence measurements.
More sophisticated measurements including single dot spectroscopy and time-resolved measurements are done by Prof. Karl Unterrainer's and Prof. Jürgen Smoliner's groups.
Aaron Maxwell Andrews
AFM scan of InAs quantum dots on a GaAs surface